AMAT 0041-75950 Cchemical Vapor Deposition Reactor — industrial automation module front view

AMAT

AMAT 0041-75950 Cchemical Vapor Deposition Reactor

Name: AMAT 0041-75950 Cchemical Vapor Deposition Reactor
Brand: AMAT
SKU: 0041-75950
Availability: InStock

SKU: 0041-75950 In Stock

The AMAT 0041-75950 is a cchemical vapor deposition for AMAT platforms. Manufacturer: AMAT | Type: Chemical Vapor Deposition (CVD) Reactor | Temperature Range: Room temperature to 1000°C. Factory-sealed, live-rack tested, 48-hour burn-in. 12-month warranty. Ships within 24h.

Technical Specifications

AMAT 0041-75950	is a Chemical Vapor Deposition (CVD) reactor, designed as a temperature-controlled heating or cooling reactor for thin-film deposition. It is used to deposit conformal and uniform films on various substrates. The reactor consists of a reaction chamber enclosed in a vacuum-sealed container, allowing precise thermal control and efficient material transfer. This equipment operates within a temperature range from room temperature to 1000°C, enabling the deposition of a variety of thin-film materials.
Model	0041-75950
Manufacturer	AMAT
Type	Chemical Vapor Deposition (CVD) Reactor
Temperature Range	Room temperature to 1000°C
Compatible Substrates	Silicon, sapphire, quartz, glass
Deposition Materials	Silicon nitride, silicon dioxide, aluminum nitride, and more
Heating Methods	Electron bombardment, induction heating, and other sources
Temperature-Controlled Chamber	The reaction chamber is designed for precise thermal control, supporting both heating and cooling functionalities for optimal film deposition.
Gas Control System	A gas control unit delivers an accurate amount of gas to the reaction chamber during the deposition process, ensuring precise control over the thin film's quality.
Deposition Source	The deposition source provides a controlled supply of material to the reaction chamber, where it is deposited onto the substrate.
Versatile Heating Sensors	The reactor is equipped with heated or cooled magnetic sensors, capable of using various heating methods such as electron bombardment and induction heating.
Multiple Material Compatibility	The reactor is designed to deposit films on a wide range of substrates, including silicon, sapphire, quartz, and glass.
Thin Film Materials	It can deposit a variety of thin films such as silicon nitride, silicon dioxide, and aluminum nitride, making it versatile for different applications.
User-Friendly Design	The reactor features an intuitive computer interface and offers both automated and manual operation options for user convenience.
Precise Control	It provides accurate control over temperature, gas flow, and deposition rates, making it ideal for a wide range of applications in the semiconductor, optoelectronic, and photomechanical industries.
Robust Mechanical Design	Built with durable materials and a solid mechanical design, the reactor ensures safe and reliable operation.
Model / SKU	0041-75950